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  Datasheet File OCR Text:
 On-Region Characteristics.
10
VGS= 10V 6.0V 4.5V
On-Resistance Variation with Drain Current and Gate Voltage.
RDS(ON), Noemalized Drain-source on-resistance
2 1.8 1.6 1.4
5.0V VGS= 4.0V 4.5V
ID, Drain-source current(A)
8
4.0V
6
4
3.5V
1.2 1 0.8
6.0V 7.0V 10V
2
3.0V
0
0
1
2
3
4
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
RDS(ON), On-resistance(OHM)
RDS(ON), Normalized Drain-source on-resistance
1.6
ID= 4.5A VGS= 10V
0.275 ID=3A
1.4
0.225
1.2
0.175
1 0.8
0.125
TA= 125 C TA= 25 C
0.075
0.6 -50
0.025
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, Junction Temperature(C)
VGS, Gate to Source Voltage(V)
Transfer Characteristics.
Is, Reverse Drain Current (A)
10
VDS= 5V TA= -55C 125C
Body Diode Forword Voltage Variation with Source Current and Temperature.
10
VGS= 0V
8
1
TA= 125C 25C -55C
ID, Drain Current(A)
25C
6
0.1
4
0.01
2
0.001
0
1
2
3
4
5
6
0.0001 0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, Gate to Source Voltage(V)
VSD, Body Diode Forword Voltage(V)
Gate-Charge Characteristics
10
ID = 4.5A VDS= 5V 15V
Capacitance Characteristics
400
8
Capacitance(pF)
300
10V
Ciss
200
VGS (Voltage)
6
4
100
Coss Crss
0 5 10 15 20 25 30
2
0
0 0 1 2 3 4 5 6 7
Qg (nC)
VDS,Drain to Source Voltage(V)
Maximum Safe Operating Area.
30
Single Pulse Maximum Power Dissipation.
5
10
100
N)L S(O RD IMI T
us
4
ID, Drain Current(A)
3 1 0.3 0.1 0.03
1m s 10m s 100 ms
Power(W)
3
VGS= 10V SINGLE PULSE R JA=125 C/W TA=25C
0.1 0.3 1 3
1s DC
2
1
VGS= 10V SINGLE PULSE R JA=125 C/W TA=25C
0.1 1 10 100 300
0.01
10
30
50
0 0.01
VDS, Drain-Source Voltage(V)
Single pulse time(SEC)
Transient Thermal Response Curve.
r(t), Normalized Effective Transient Thermal Resistance
1 D=0.5
0.5
0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse
P(pk)
t1 t2
0.02
R JA(t) = r(t) * R R JA=125 C/W TJ-TA=P*R JA(t) Duty Cycle, D= t1/ t2
0.001 0.01 0.1 1 10 100 300
0.01 0.0001
t1 Time(Sec)


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